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SEI film resistance loss is not included in heat generation #5820
When any SEI option is on, "SEI film resistance" defaults to "distributed". The film's voltage drop (eta_sei = -j * L_sei * R_sei) is added to the reaction overpotential in BaseKinetics (eta_r += eta_sei), so it lowers the terminal voltage. But BaseThermal computes irreversible heat as a_j * eta_r using that reduced overpotential. The energy lost across the film therefore never appears in Total heating [W] or in the cell temperature. Energy is not conserved: electrical loss rises and heat does not.
To reproduce
OKane2022, SPMe, lumped thermal, SEI: "solvent-diffusion limited", 5 A discharge for 3000 s, comparing film resistance "distributed" against "none":
Initial SEI thickness
Extra electrical loss from film
Extra heat
End temperature difference
5 nm
22.4 J
0.0 J
0.000 K
20 nm
89.3 J
0.0 J
0.000 K
50 nm
223.2 J
0.0 J
0.000 K
Total heat is 1951 J in every case, so at 50 nm about 10% of the true heat is missing.
Add a film heating term a_j * eta_sei (and the equivalent for SEI on cracks) to the heat source. It could be a separate "SEI film heating [W]" variable that is included in Total heating [W]. In a local patch, adding film voltage × current to the heat recovered about 95% of the missing energy.
Activity
rtimms commentedon Oct 12, 2026
Linking the open PRs for this issue:
"SEI film resistance": "average"build with a particle-size distribution. Found while checking fix: include SEI film resistive loss in irreversible heating #5841.The same kind of gap exists for contact resistance: #5879, partly addressed in #5890.