Mosfet Database

This repository is dedicated to collecting, organizing, and sharing MOSFET data parameters for engineers, hobbyists, and anyone working with MOSFETs in their projects. The goal is to provide a centralized and easy-to-navigate database for commonly used MOSFETs, including their key specifications and datasheets.

Repository Structure

The repository is organized as follows:

|--- README.md                  # This file
|--- parameters/                # Directory for storing MOSFET parameter files
|    |--- n-channel/            # Directory for N-channel MOSFETs
|    |    |--- DPAK/            # Sorting MOSFET based on package
|    |    |--- D2PAK/
|    |    |---
|    |--- p-channel/            # Directory for P-channel MOSFETs
|--- scripts/                   # Any scripts used for processing or analyzing data

Example File Format

Each MOSFET has its own .json file under the parameters/ directory. For json template, please copy template.json.

Detailing the key parameters:

{
    "name": "SP010N02AGHTO",
    "manufacture": "Siliup Semicondctor",
    "type": "N-Channel",
    "package": "TOLL",
    "vds": 100,
    "ids": 340,
    "rds_typ": 1.3,
    "rds_max": 1.65,
    "vgs_min": -20,
    "vgs_max": 20,
    
    .
    .
    .

    "Td_on": 25,
    "Td_off": 89,
    "Tr": 75,
    "Tf": 29,
    "datasheet" : "https://wmsc.lcsc.com/wmsc/upload/file/pdf/v2/lcsc/2404191548_Siliup-SP010N02AGHTO_C22385351.pdf"
}

MOSFET Parameters

This repository tracks MOSFET parameters, including:

Parameter	Variant	Description	Test Condition	Unit
name	name	Product name from manufacture
manufacture	manufacture	MOSFET manufacture
type	type	MOSFET Type. Example : N-channel, P-channel
package	package	MOSFET Package. Example : TO-220AB, D2PAK, etc.
vds	vds	Maximum drain-source voltage		V
ids	ids, ids_100	Mosfet drain current	ids : @Tc 25°C ids_100 : @Tc 25°C	A
idm	idm	Mosfet pulsed drain current		A
vgs	vgs_min, vgs_max	Gate voltage
eas	eas	Single pulse avalanche energy		mJ
ias	ias	Avalanche current		A
pd	pd	Maximum power dissipation	@Tc 25°C	W
derating	derating	Mosfet linear derating factor		W/°C
rjc	rjc	Junction-to-case thermal resistance		°C/W
rjs	rjs	Junction-to-sink thermal resistance		°C/W
rja	rja	Junction-to-ambient thermal resistance		°C/W
t_stg	t_stg_min, t_stg_max	Storage temperature		°C
t_j	t_j_min, t_j_max	Junction temperature		°C
bvdss	bvdss_min	Minimum MOSFET breakdown voltage	@Vgs 0V	V
bvdss_coeff	bvdss_coeff	Breakdown voltage temperature coeffisien	@Tj 25°C	V/°C
idss	idss_max	Drain-to-Source leakage current	@Tj 25°C	uA
igss	igss_max	Gate-to-Source leakage current		+/- nA
vgs_th	vgs_th_min, vgs_th_typ, vgs_th_max	Gate-source voltage threshold		V
rds	rds_typ, rds_max	MOSFET Rds(on)	@Vgs 10V	mΩ
rg	rg, rg_max	MOSFET gate internal resistance		Ω
gfs	gfs_min, gfs_typ, gfs_max	Forward Transinductance		S
ciss	ciss_min, ciss, ciss_max	Input capacitance		pF
coss	coss_min, coss, coss_max	Output capacitance		pF
crss	crss_min, crss, crss_max	Reverse transfer capacitance		pF
Qg	Qg_min, Qg, Qg_max	Total gate charge		nC
Qgs	Qgs_min, Qgs, Qgs_max	Gate-to-source charge		nC
Qgd	Qgd_min, Qgd, Qgd_max	Gate-to-drain ("Miller") charge		nC
Qsw	Qsw_min, Qsw, Qsw_max	Switching charge		nC
Qoss	Qoss_min, Qoss, Qoss_max	Output charge		nC
vplateau	vplateau_min, vplateau, vplateau_max	MOSFET plateau ("Miller") voltage		V
Td_on	Td_on	Turn-on delay		n sec
Tr	Tr	Rise time		n sec
Td_off	Td_off	Turn-off delay		n sec
Tf	Tf	Fall time		n sec
vsd	vsd_min, vsd_typ, vsd_max	MOSFET internal diode forward voltage		V
is	is_max	MOSFET internal diode forward current		V
is_pulse	is_pulse_max	MOSFET internal diode pulsed current		A
Trr	Trr, Trr_max	Diode reverse recovery time	@Tj 25°C	n sec
Qrr	Qrr, Qrr_max	Diode reverse recovery charge	@Tj 25°C	n sec
datasheet	datasheet	Source of datasheet external link

Usage

• Search the repository for the MOSFET part number.
• View the corresponding parameter file or datasheet.
• Use the data in your design calculations or simulations.

Contributing

We welcome contributions! If you have MOSFET data or datasheets to add:

1. Fork the repository and create a branch for your contribution.
2. Add the MOSFET parameter file to the appropriate directory under parameters/.
3. Submit a pull request with a clear description of your changes.

License

This repository is licensed under the MIT License. Feel free to use and distribute the content with proper attribution.